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TP44440HB
Part number：
TP44440HB
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Tagore Technology
describe：
GANFET 2N-CH 650V 30QFN
package：
Tray
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 1657
minimum : 0
quantity
unit price
price
1
3.13
3.13
10
3.13
31.3
specifications
  • Package / Case
    30-PowerWFQFN
  • Mounting Type
    Surface Mount
  • Configuration
    2 N-Channel (Half Bridge)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    650V
  • Current - Continuous Drain (Id) @ 25°C
    6.5A (Tc)
  • Input Capacitance (Ciss) (Max) @ Vds
    28pF @ 400V
  • Rds On (Max) @ Id, Vgs
    472mOhm @ 500mA, 6V
  • Gate Charge (Qg) (Max) @ Vgs
    0.75nC @ 6V
  • Vgs(th) (Max) @ Id
    2.5V @ 2.8mA
  • Supplier Device Package
    30-QFN (8x10)
  • 3008513972/3008513927/3008513975
  • 13342993690

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