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TP44100SG
Part number：
TP44100SG
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Tagore Technology
describe：
GAN FET HEMT 650V .118OHM 22QFN
package：
Tape & Reel (TR)
ROHS status：
None
currency：
USD
PDF:
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inventory 4569
minimum : 0
quantity
unit price
price
3000
3.3
9900
specifications
  • Package / Case
    22-PowerVFQFN
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Technology
    GaNFET (Gallium Nitride)
  • FET Type
    N-Channel
  • Current - Continuous Drain (Id) @ 25°C
    19A (Tc)
  • Rds On (Max) @ Id, Vgs
    118mOhm @ 500mA, 6V
  • Vgs(th) (Max) @ Id
    2.5V @ 11mA
  • Supplier Device Package
    22-QFN (5x7)
  • Drive Voltage (Max Rds On, Min Rds On)
    0V, 6V
  • Vgs (Max)
    ±20V
  • Drain to Source Voltage (Vdss)
    650 V
  • Gate Charge (Qg) (Max) @ Vgs
    3 nC @ 6 V
  • Input Capacitance (Ciss) (Max) @ Vds
    110 pF @ 400 V
  • 3008513972/3008513927/3008513975
  • 13342993690

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