collect compare
QS1200SCM36
Part number:
QS1200SCM36
manufacturer:
describe:
1200V 36AMP SiC Mosfet
package:
ROHS status:
Yes
currency:
USD
PDF:
BUY NOW add to cart
inventory 2577
minimum : 0
quantity
unit price
price
1
12.99
12.99
specifications
  • Package / Case
    TO-247-3
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • FET Type
    N-Channel
  • Current - Continuous Drain (Id) @ 25°C
    36A
  • Rds On (Max) @ Id, Vgs
    100mOhm @ 20A, 20V
  • Power Dissipation (Max)
    198W
  • Vgs(th) (Max) @ Id
    3.8V @ 100µA
  • Supplier Device Package
    PG-TO247-3
  • Grade
    Automotive
  • Drive Voltage (Max Rds On, Min Rds On)
    2.8V
  • Vgs (Max)
    +25V, -10V
  • Drain to Source Voltage (Vdss)
    1200 V
  • Gate Charge (Qg) (Max) @ Vgs
    60 nC @ 600 V
  • Input Capacitance (Ciss) (Max) @ Vds
    1001 pF @ 800 V