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HTNFET-D
Part number：
HTNFET-D
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Honeywell Aerospace
describe：
MOSFET N-CH 55V 8CDIP
package：
ROHS status：
None
currency：
USD
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inventory 1600
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specifications
  • Package / Case
    8-CDIP Exposed Pad
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 225°C (TJ)
  • Technology
    MOSFET (Metal Oxide)
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    400mOhm @ 100mA, 5V
  • Power Dissipation (Max)
    50W (Tj)
  • Vgs(th) (Max) @ Id
    2.4V @ 100µA
  • Supplier Device Package
    8-CDIP-EP
  • Drive Voltage (Max Rds On, Min Rds On)
    5V
  • Vgs (Max)
    10V
  • Drain to Source Voltage (Vdss)
    55 V
  • Gate Charge (Qg) (Max) @ Vgs
    4.3 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds
    290 pF @ 28 V
  • 3008513972/3008513927/3008513975
  • 13342993690

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