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GP2T080A120H
Part number：
GP2T080A120H
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
SemiQ
describe：
SIC MOSFET 1200V 80M TO-247-4L
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 1613
minimum : 0
quantity
unit price
price
1
11.2
11.2
30
8.94
268.2
120
8
960
510
7.06
3600.6
1020
6.35
6477
specifications
  • Package / Case
    TO-247-4
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Technology
    SiCFET (Silicon Carbide)
  • FET Type
    N-Channel
  • Current - Continuous Drain (Id) @ 25°C
    35A (Tc)
  • Rds On (Max) @ Id, Vgs
    100mOhm @ 20A, 20V
  • Power Dissipation (Max)
    188W (Tc)
  • Vgs(th) (Max) @ Id
    4V @ 10mA
  • Supplier Device Package
    TO-247-4
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Vgs (Max)
    +25V, -10V
  • Drain to Source Voltage (Vdss)
    1200 V
  • Gate Charge (Qg) (Max) @ Vgs
    61 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds
    1377 pF @ 1000 V
  • 3008513972/3008513927/3008513975
  • 13342993690

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