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GCMS080B120S1-E1
Part number：
GCMS080B120S1-E1
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
SemiQ
describe：
SIC 1200V 80M MOSFET & 10A SBD S
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 1640
minimum : 0
quantity
unit price
price
1
24.74
24.74
10
21.98
219.8
100
19.23
1923
500
16.41
8205
specifications
  • Package / Case
    SOT-227-4, miniBLOC
  • Mounting Type
    Chassis Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Technology
    SiCFET (Silicon Carbide)
  • FET Type
    N-Channel
  • Current - Continuous Drain (Id) @ 25°C
    30A (Tc)
  • Rds On (Max) @ Id, Vgs
    100mOhm @ 20A, 20V
  • Power Dissipation (Max)
    142W (Tc)
  • Vgs(th) (Max) @ Id
    4V @ 10mA
  • Supplier Device Package
    SOT-227
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Vgs (Max)
    +25V, -10V
  • Drain to Source Voltage (Vdss)
    1200 V
  • Gate Charge (Qg) (Max) @ Vgs
    58 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds
    1374 pF @ 1000 V
  • 3008513972/3008513927/3008513975
  • 13342993690

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