collect compare
G01N20LE
Part number：
G01N20LE
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Goford Semiconductor
describe：
N200V,RD(MAX)<850M@10V,RD(MAX)<9
package：
Tape & Reel (TR)
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 2426
minimum : 0
quantity
unit price
price
3000
0.11
330
6000
0.11
660
9000
0.1
900
30000
0.09
2700
75000
0.09
6750
specifications
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Technology
    MOSFET (Metal Oxide)
  • FET Type
    N-Channel
  • Current - Continuous Drain (Id) @ 25°C
    1.7A (Tc)
  • Rds On (Max) @ Id, Vgs
    700mOhm @ 1A, 10V
  • Power Dissipation (Max)
    1.5W (Tc)
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Supplier Device Package
    SOT-23-3
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Vgs (Max)
    ±20V
  • Drain to Source Voltage (Vdss)
    200 V
  • Gate Charge (Qg) (Max) @ Vgs
    12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds
    580 pF @ 25 V
  • 3008513972/3008513927/3008513975
  • 13342993690

{{ boxName }} ({{ dataList?.length || 0 }} Items)

{{ val.part_number }}

{{ val.manufacturer || val.en_manufacturer || '' }}

quantity: {{ val.quantity }}

submit

it was empty.