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FBG10N05ASH
Part number：
FBG10N05ASH
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
EPC Space
describe：
GAN FET HEMT 100V 5A 4FSMD-A
package：
Bulk
ROHS status：
None
currency：
USD
PDF:
BUY NOW add to cart
inventory 1649
minimum : 0
quantity
unit price
price
1
392.75
392.75
10
377.99
3779.9
specifications
  • Package / Case
    4-SMD, No Lead
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Technology
    GaNFET (Gallium Nitride)
  • FET Type
    N-Channel
  • Current - Continuous Drain (Id) @ 25°C
    5A (Tc)
  • Rds On (Max) @ Id, Vgs
    45mOhm @ 5A, 5V
  • Vgs(th) (Max) @ Id
    2.5V @ 1.2mA
  • Supplier Device Package
    4-SMD
  • Drive Voltage (Max Rds On, Min Rds On)
    5V
  • Vgs (Max)
    +6V, -4V
  • Drain to Source Voltage (Vdss)
    100 V
  • Gate Charge (Qg) (Max) @ Vgs
    2.2 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds
    233 pF @ 50 V
  • 3008513972/3008513927/3008513975
  • 13342993690

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