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specifications
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Package / Case
Die
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Mounting Type
Surface Mount
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Operating Temperature
-40°C ~ 150°C (TJ)
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Technology
GaNFET (Gallium Nitride)
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FET Type
N-Channel
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Current - Continuous Drain (Id) @ 25°C
4A (Ta)
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Rds On (Max) @ Id, Vgs
130mOhm @ 500mA, 5V
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Vgs(th) (Max) @ Id
2.5V @ 250µA
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Supplier Device Package
Die
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Drive Voltage (Max Rds On, Min Rds On)
5V
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Vgs (Max)
+6V, -4V
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Drain to Source Voltage (Vdss)
65 V
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Gate Charge (Qg) (Max) @ Vgs
0.45 nC @ 5 V
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Input Capacitance (Ciss) (Max) @ Vds
52 pF @ 32.5 V