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E4M0013120K
Part number:
E4M0013120K
manufacturer:
describe:
13M, 1200V, SIC FET TO-247, AUTO
package:
Tube
ROHS status:
Yes
currency:
USD
PDF:
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inventory 1995
minimum : 0
quantity
unit price
price
1
98.6
98.6
30
85.87
2576.1
120
81.42
9770.4
specifications
  • Package / Case
    TO-247-4
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • FET Type
    N-Channel
  • Current - Continuous Drain (Id) @ 25°C
    153A (Tc)
  • Rds On (Max) @ Id, Vgs
    17mOhm @ 84.29A, 15V
  • Power Dissipation (Max)
    517W (Tc)
  • Vgs(th) (Max) @ Id
    3.8V @ 23.18mA
  • Supplier Device Package
    TO-247-4L
  • Grade
    Automotive
  • Drive Voltage (Max Rds On, Min Rds On)
    15V
  • Vgs (Max)
    +19V, -8V
  • Drain to Source Voltage (Vdss)
    1200 V
  • Gate Charge (Qg) (Max) @ Vgs
    293 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds
    7407 pF @ 1000 V
  • Qualification
    AEC-Q101