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CMF20120D
Part number:
CMF20120D
manufacturer:
describe:
SICFET N-CH 1200V 42A TO247-3
package:
ROHS status:
None
currency:
USD
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specifications
  • Package / Case
    TO-247-3
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 135°C (TJ)
  • Technology
    SiCFET (Silicon Carbide)
  • FET Type
    N-Channel
  • Current - Continuous Drain (Id) @ 25°C
    42A (Tc)
  • Rds On (Max) @ Id, Vgs
    110mOhm @ 20A, 20V
  • Power Dissipation (Max)
    215W (Tc)
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Supplier Device Package
    TO-247-3
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Vgs (Max)
    +25V, -5V
  • Drain to Source Voltage (Vdss)
    1200 V
  • Gate Charge (Qg) (Max) @ Vgs
    90.8 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds
    1915 pF @ 800 V