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C3M0280090D
Part number:
C3M0280090D
manufacturer:
describe:
SICFET N-CH 900V 11.5A TO247-3
package:
Tube
ROHS status:
Yes
currency:
USD
PDF:
BUY NOW add to cart
inventory 9947
minimum : 0
quantity
unit price
price
1
7.5
7.5
30
5.99
179.7
120
5.36
643.2
510
4.73
2412.3
1020
4.25
4335
2010
3.99
8019.9
specifications
  • Package / Case
    TO-247-3
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Technology
    SiCFET (Silicon Carbide)
  • FET Type
    N-Channel
  • Current - Continuous Drain (Id) @ 25°C
    11.5A (Tc)
  • Rds On (Max) @ Id, Vgs
    360mOhm @ 7.5A, 15V
  • Power Dissipation (Max)
    54W (Tc)
  • Vgs(th) (Max) @ Id
    3.5V @ 1.2mA
  • Supplier Device Package
    TO-247-3
  • Drive Voltage (Max Rds On, Min Rds On)
    15V
  • Vgs (Max)
    +18V, -8V
  • Drain to Source Voltage (Vdss)
    900 V
  • Gate Charge (Qg) (Max) @ Vgs
    9.5 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds
    150 pF @ 600 V