collect compare
C3M0120090D
Part number:
C3M0120090D
manufacturer:
describe:
SICFET N-CH 900V 23A TO247-3
package:
Tube
ROHS status:
Yes
currency:
USD
PDF:
BUY NOW add to cart
inventory 8422
minimum : 0
quantity
unit price
price
1
12.26
12.26
30
9.92
297.6
120
9.34
1120.8
510
8.46
4314.6
1020
7.76
7915.2
specifications
  • Package / Case
    TO-247-3
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Technology
    SiCFET (Silicon Carbide)
  • FET Type
    N-Channel
  • Current - Continuous Drain (Id) @ 25°C
    23A (Tc)
  • Rds On (Max) @ Id, Vgs
    155mOhm @ 15A, 15V
  • Power Dissipation (Max)
    97W (Tc)
  • Vgs(th) (Max) @ Id
    3.5V @ 3mA
  • Supplier Device Package
    TO-247-3
  • Drive Voltage (Max Rds On, Min Rds On)
    15V
  • Vgs (Max)
    +18V, -8V
  • Drain to Source Voltage (Vdss)
    900 V
  • Gate Charge (Qg) (Max) @ Vgs
    17.3 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds
    414 pF @ 600 V