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C3M0065090J
Part number:
C3M0065090J
manufacturer:
describe:
SICFET N-CH 900V 35A D2PAK-7
package:
Tube
ROHS status:
Yes
currency:
USD
PDF:
BUY NOW add to cart
inventory 5886
minimum : 0
quantity
unit price
price
1
19.73
19.73
50
15.97
798.5
100
15.03
1503
500
13.62
6810
specifications
  • Package / Case
    TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Technology
    SiCFET (Silicon Carbide)
  • FET Type
    N-Channel
  • Current - Continuous Drain (Id) @ 25°C
    35A (Tc)
  • Rds On (Max) @ Id, Vgs
    78mOhm @ 20A, 15V
  • Power Dissipation (Max)
    113W (Tc)
  • Vgs(th) (Max) @ Id
    3.5V @ 5mA
  • Supplier Device Package
    TO-263-7
  • Drive Voltage (Max Rds On, Min Rds On)
    15V
  • Vgs (Max)
    +19V, -8V
  • Drain to Source Voltage (Vdss)
    900 V
  • Gate Charge (Qg) (Max) @ Vgs
    30 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds
    660 pF @ 600 V