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C2M1000170D
Part number:
C2M1000170D
manufacturer:
describe:
SICFET N-CH 1700V 4.9A TO247-3
package:
Tube
ROHS status:
Yes
currency:
USD
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inventory 2269
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quantity
unit price
price
1
11.37
11.37
30
9.08
272.4
120
8.12
974.4
510
7.17
3656.7
1020
6.45
6579
specifications
  • Package / Case
    TO-247-3
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Technology
    SiCFET (Silicon Carbide)
  • FET Type
    N-Channel
  • Current - Continuous Drain (Id) @ 25°C
    4.9A (Tc)
  • Rds On (Max) @ Id, Vgs
    1.1Ohm @ 2A, 20V
  • Power Dissipation (Max)
    69W (Tc)
  • Vgs(th) (Max) @ Id
    4V @ 500µA
  • Supplier Device Package
    TO-247-3
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Vgs (Max)
    +25V, -10V
  • Drain to Source Voltage (Vdss)
    1700 V
  • Gate Charge (Qg) (Max) @ Vgs
    13 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds
    191 pF @ 1000 V