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C2M0280120D
Part number:
C2M0280120D
manufacturer:
describe:
SICFET N-CH 1200V 10A TO247-3
package:
Tube
ROHS status:
Yes
currency:
USD
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inventory 15950
minimum : 0
quantity
unit price
price
1
10.96
10.96
30
8.75
262.5
120
7.83
939.6
510
6.91
3524.1
1020
6.22
6344.4
specifications
  • Package / Case
    TO-247-3
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Technology
    SiCFET (Silicon Carbide)
  • FET Type
    N-Channel
  • Current - Continuous Drain (Id) @ 25°C
    10A (Tc)
  • Rds On (Max) @ Id, Vgs
    370mOhm @ 6A, 20V
  • Power Dissipation (Max)
    62.5W (Tc)
  • Vgs(th) (Max) @ Id
    2.8V @ 1.25mA (Typ)
  • Supplier Device Package
    TO-247-3
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Vgs (Max)
    +25V, -10V
  • Drain to Source Voltage (Vdss)
    1200 V
  • Gate Charge (Qg) (Max) @ Vgs
    20.4 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds
    259 pF @ 1000 V