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C2M0160120D
Part number:
C2M0160120D
manufacturer:
describe:
SICFET N-CH 1200V 19A TO247-3
package:
Tube
ROHS status:
Yes
currency:
USD
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inventory 3324
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quantity
unit price
price
1
15.91
15.91
30
12.88
386.4
120
12.12
1454.4
510
10.98
5599.8
specifications
  • Package / Case
    TO-247-3
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Technology
    SiCFET (Silicon Carbide)
  • FET Type
    N-Channel
  • Current - Continuous Drain (Id) @ 25°C
    19A (Tc)
  • Rds On (Max) @ Id, Vgs
    196mOhm @ 10A, 20V
  • Power Dissipation (Max)
    125W (Tc)
  • Vgs(th) (Max) @ Id
    2.5V @ 500µA
  • Supplier Device Package
    TO-247-3
  • Drive Voltage (Max Rds On, Min Rds On)
    20V
  • Vgs (Max)
    +25V, -10V
  • Drain to Source Voltage (Vdss)
    1200 V
  • Gate Charge (Qg) (Max) @ Vgs
    32.6 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds
    527 pF @ 800 V