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安装类型
Surface Mount
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工作温度
-55°C ~ 150°C (TJ)
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配置
2 N-Channel (Half Bridge)
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Technology
GaNFET (Gallium Nitride)
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Current - Continuous Drain (Id) @ 25°C
6.5A (Tc)
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Drain to Source Voltage (Vdss)
650V
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包装/箱
30-PowerWFQFN
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供应商设备包
30-QFN (8x10)
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Vgs(th)(最大值)@Id
2.5V @ 2.8mA
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Rds On (Max) @ Id, Vgs
472mOhm @ 500mA, 6V
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Gate Charge (Qg) (Max) @ Vgs
0.75nC @ 6V
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Input Capacitance (Ciss) (Max) @ Vds
28pF @ 400V